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PD412PI
PD412PI
s Features
1. High sensitivity (TYP. 0.5A/W at p= 780nm) 2. High speed response
Compact Package Type Photodiode with Condensing Lens
s Outline Dimensions
Detector center
(Unit : mm)
4.0 0.2 2.4
R1.75 0.1 1.5 (2.5 ) 5.0 0.2 8 8
+ 1.5 - 1.0
2.0 0.2 0.5 8
Transparent epoxy resin
Rest of gate
MAX. 0.4
0.8
s Applications
1. Optoelectronic switches 2. MD (mini disk) laser power monitors
2.54 g
MIN. 0.5
17.15
2-0.45
+ 0.2 - 0.1
2.15
8
0.2 0.1
2-0.4 + -
1
2
0.2
8 1
8 2
3.75
1 Anode 2 Cathode *Tolerance : 0.15 * ( ) : Reference dimensions g Dimension at lead root
8
8
s Absolute Maximum Ratings
Parameter Reverse voltage Power dissipation Operating temperature Storage temperature *1 Soldering temperature Symbol Rating VR 32 P 150 - 25 to +85 T opr - 40 to +100 T stg 260 T sol
(Ta=25C) Unit V mW C C C
Soldering area
*1 For MAX. 5 seconds at the position of 2.15 mm from the resin edge
" In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device."
2.15mm
PD412PI
s Electro-optical Characteristics
Parameter Shortcircuit current Shortcircuit current temperature coefficient Dark current Dark current temperature coefficient Terminal capacitance Peak sensitivity wavelength Peak spectral sensitivity Response time Half intensity angle
*2 E V : Illuminance by CIE standard light source A (tungsten lamp)
(Ta=25 C) Symbol Isc T Id T Ct p K tr tf
*2 *2
Conditions EV = 100 lx EV = 100 lx VR = 10V, Ee= 0 VR = 10V, Ee= 0 VR = 3V, f= 1MHZ l = 780nm RL= 1k VR= 10V
MIN. 3.5 -
TYP. 4.7 0.2 0.5 3.5 100 800 0.5 250 250 45
MAX. 6.3 10 5.0 350 -
Unit A % /C nA times/10C pF nm A/W ns
Rise Time Fall Time
Fig. 1 Power Dissipation vs. Ambient Temperature
200
Fig. 2 Shortcircuit Current vs. Illuminance
1000 Ta=25C
150
Shortcircuit current I SC ( A)
Power dissipation P (mW)
100
10
100
1
50
0.1
0 - 25 0 25 50 75 85 100
0.01 1
10
100
1000
10000
Ambient temperature T a ( C)
Illuminance E V (lx)
PD412PI
Fig. 3 Spectral Sensitivity
100 90 80
Fig. 4 Dark Current vs. Ambient Temperature
10
-7
Ta=25C
10
-8
VR=10V
Relative sensitivity (%)
70 60 50 40 30 20 10 0 400 500 600 700 800 900 1000 1100 1200
(A) Dark current I
d
10
-9
10
- 10
10 10
-11
-12
10
-13
Wavelength (nm)
- 25
0
25
50
75
100
Ambient temperature T a (C)
Fig. 5 Dark Current vs. Reverse Voltage
1000
Ta=25C
Fig. 6 Terminal Capacitance vs. Reverse Voltage
300
f=1MHz Ta=25C
100
Terminal capacitance C t ( pF )
250
(pA)
200
Dark current I
d
10
150 100
1
50 0 0.01
0.1 0.01
0.1
1
10
100
0.1
1
10
100
Reverse voltage V R (V)
Reverse voltage VR ( V)
Fig. 7 Relative Output vs. Ambient Temperature
115
Light source : CIE standard light source A (tungsten lamp)
Fig. 8 Radiation Diagram
- 20 - 10 0 100 -30 80 +10
(Ta = 25C )
+ 20
110
+ 30
105
-40
Relative sensitivity (%)
Relative output (%)
60
+ 40
100
-50
40
+ 50 + 60
95
-60 -70 -80
90
20
+ 70 + 80 + 90
85 - 25
-90
0
25
50
75
100
0
Ambient temperature T a (C)
Angular displacement
PD412PI
Fig. 9 Relative Output vs. Distance (Detector : GL537/GL538)
100 GL538
Fig. 10 Response Time vs. Load Resistance
100
VR=10V Ta=25C
Relative output (%)
10
GL537
Response time t r,tf ( s )
10
1
tr, tf
1
0.1
0.1 10
IF = 20mA Ta = 25C
-4
10
-3
10
-2
10
-1
0.01 10 1
10 2
10 3
10 4
10 5
Distance between emitter and detector d (m)
Load resistance R L ( )
Test Circuit for Response Time
Semiconductor laser
IOUT = 0.1mA PD412PI + Output RL 10V
Input
90% Output tr tf 10%
Pulse generator
q Please refer to the chapter "Precautions for Use". (Page 78 to 93)

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